Authors: Dr. Alla Srivani Professor
Abstract: The InP₁₋ₓAsₓ (Indium Phosphide-Arsenide) ternary semiconductor alloy plays a significant role in quantum computing and optoelectronics, especially in the context of quantum communication, qubit systems, and quantum dot structures. An essential issue in developing semiconductor devices for photo-voltaics and thermo electric is to design materials with appropriate band gaps plus the proper positioning of do pant levels relative to the bands. Ternary Semiconductor alloys provide a natural means of tuning the magnitude of the forbidden gap for wide Application of Semiconductor devices. The need to provide materials for applications in the long-wavelength range for infrared detectors has led to the development of III-V Ternary alloys of InP₁₋ₓAsx Ternary Semiconductor. InP₁₋ₓAsx III-V Ternary semiconductor is very important as an x of a constituent in the semiconductor is going to have significant changes in calculating Physical Property like Band Energy Gap. These Ternary Compounds can be derived from binary compounds InAs and InP by replacing one half of the atoms in one sub lattice by lower valence atoms, the other half by higher valence atoms and maintaining average number of valence electrons per atom. The subscript X refers to the alloy content or concentration of the material, which describes proportion of the material added and replaced by alloy material. This paper represents the InP₁₋ₓAsx III-V Ternary Semiconductor Band Energy Gap values. Our results agree well with the Available data in the literature.
DOI: https://doi.org/10.5281/zenodo.16258617
